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BS62LV1029

器件描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit
器件厂商:BSI [Brilliance Semiconductor]
文件大小:424.72KB,共10页
Sponsor by e络盟
器件资料摘要:
R0201-BS62LV1029 Revision 1.1
Jan. 2004
1
POWER DISSIPATION
SPEED
(ns)
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=5.0V
PKG TYPE
BS62LV1029SC SOP-32
BS62LV1029TC TSOP-32
BS62LV1029STC STSOP-32
BS62LV1029PC PDIP-32
BS62LV1029JC SOJ-32
BS62LV1029DC
+0
O
C to +70
O
C 4.5V ~ 5.5V 55/70 8.0uA 46mA
DICE
BS62LV1029SI SOP-32
BS62LV1029TI TSOP-32
BS62LV1029STI STSOP-32
BS62LV1029PI PDIP-32
BS62LV1029JI SOJ-32
BS62LV1029DI
-40
O
C to +85
O
C4.5V~ 5.5V 55/70 20uA 47mA
DICE
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 46mA (@55ns) operating current
I- grade : 47mA (@55ns) operating current
C-grade : 38mA (@70ns) operating current
I- grade : 39mA (@70ns) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
The BS62LV1029 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA at 5V/25
o
C and maximum access time of 55ns at 5V/85
o
C.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1029 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1029 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
„ DESCRIPTION„ FEATURES
„ BLOCK DIAGRAM
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
BS62LV1029
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

BS62LV1029SC
BS62LV1029SI
BS62LV1029PC
BS62LV1029PI
BS62LV1029JC
BS62LV1029JI
A7
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 1024
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
Address Input Buffer
A3 A2 A1 A0 A10
Data
Buffer
Input
Control
Gnd
Vdd
OE
WE
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A14
A9
A11
A8
A13
A12
A6
8
8
8
8
14
128
1024
1024
20
A16
A15
A4A5
CE2
BSI
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4

BS62LV1029TC
BS62LV1029STC
BS62LV1029TI
BS62LV1029STI
55ns :4.5~5.5V
70ns :4.5~5.5V
Vcc=5.0V
55ns 70ns
38mA
39mA