BS62LV1029
器件描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit
文件大小:424.72KB,共10页
Sponsor by e络盟
器件资料摘要:
R0201-BS62LV1029 Revision 1.1
Jan. 2004
1
POWER DISSIPATION
SPEED
(ns)
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=5.0V
PKG TYPE
BS62LV1029SC SOP-32
BS62LV1029TC TSOP-32
BS62LV1029STC STSOP-32
BS62LV1029PC PDIP-32
BS62LV1029JC SOJ-32
BS62LV1029DC
+0
O
C to +70
O
C 4.5V ~ 5.5V 55/70 8.0uA 46mA
DICE
BS62LV1029SI SOP-32
BS62LV1029TI TSOP-32
BS62LV1029STI STSOP-32
BS62LV1029PI PDIP-32
BS62LV1029JI SOJ-32
BS62LV1029DI
-40
O
C to +85
O
C4.5V~ 5.5V 55/70 20uA 47mA
DICE
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 46mA (@55ns) operating current
I- grade : 47mA (@55ns) operating current
C-grade : 38mA (@70ns) operating current
I- grade : 39mA (@70ns) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
The BS62LV1029 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA at 5V/25
o
C and maximum access time of 55ns at 5V/85
o
C.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1029 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1029 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.