A D V A N C E D S E M I C O N D U C T O R, I N C. REV. D
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA 35 V
BV
CES
I
C
= 100 mA 65 V
BV
CBO
I
C
= 100 mA 65
BV
EBO
I
E
= 10 mA 4.0 V
I
CES
V
CE
= 30 V 15 mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A 10 200 ---
C
ob
V
CB
= 30 V f = 1.0 MHz --- 285 pF
G
P

IMD
3
V
CE
= 28 V P
IN
= 3.16 W P
PUT
= 100 W
f
1
= 30.000 MHz I
CQ
= 100 mA f
2
= 30.001 MHz
15

16
-34

-30
dB
dBc

NPN SILICON RF POWER TRANSISTOR
HF100-28
DESCRIPTION:
The ASI HF100-28 is a class A silicon NPN
planar transistor, designed for SSB
communications. Diffused ballasting provide
High VSRW Capability under rated operating
conditions.
FEATURES:
• P
G
= 15 dB min. at 100 W/30 MHz
• High linear power output
• IMD
3
= -30 dBc max. at 100 W(PEP)
• Omnigold™ Metalization System
• 28 V CE operation
MAXIMUM RATINGS
I
C
20 A
V
CBO
65 V
V
CEO
36 V
V
EBO
4.0 V
P
DISS
270 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
0.65 °C/W
PACKAGE STYLE .500 4L FLG


















ORDER CODE: ASI10608
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H .003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
E
C
B
E