TO-92L Plastic-Encapsulated Transistors


2SA935 TRANSISTOR (PNP)

FEATURES
Power dissipation
P
CM
: 0.75 W (Tamb=25℃)
Collector current
I
CM
: -0.7 A
Collector-base voltage
V
(BR)CBO
: -80 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-50µA, I
E
=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-2mA, I
B
=0 -80 V
Emitter-base breakdown voltage V(BR)EBO I
E
=-50µA, I
C
=0 -5 V
Collector cut-off current ICBO V
CB
=-50V, I
E
=0 -0.5 µA
Emitter cut-off current IEBO VEB=-4V, IC=0 -0.5 µA
DC current gain hFE(1) V
CE
=-3V, I
C
=-100mA 82 390
Collector-emitter saturation voltage VCE(sat) I
C
=-500mA, I
B
=-50mA -0.4 V
Transition frequency f
T
V
CE
=-10V, I
C
=-50mA 100 MHz
Collector output capacitance Cob V
CB
=-10V, I
E
=0, f=1MHz 20 pF

CLASSIFICATION OF h
FE(1)

Rank P Q R
Range 82-180 120-270 180-390
Marking




1 2 3

TO-92L


1. EMITTER

2. COLLECTOR

3. BASE

Transys
Electronics
LIM ITED