A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 10 mA 60 V
BV
CEO
I
C
= 50 mA 30 V
BV
EBO
I
E
= 4.0 mA 4.0 V
I
CBO
V
CB
= 30 V 4.0 mA
h
FE
V
CE
= 25 V I
C
= 500 mA 15 120 ---
C
OB
V
CB
= 28 V f = 1.0 MHz 10 pF
P
G
IMD
1
V
CE
= 25 V I
C
= 410 mA f = 860 MHz
P
OUT
= 2.0 W
10
-60
dB
dBc
NPN SILICON RF POWER TRANSISTOR
BLV30
DESCRIPTION:
The ASI BLV30 is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• P
G
= 10 dB at 2.0 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
1.5 A
V
CBO
60 V
V
CEO
30 V
V
EBO
4.0 V
P
DISS
15.9 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
10
O
C/W
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H .245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J .217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
SS
D
G