Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 8V
Gate 1 to source voltage VG1S –6 V
• Gate 2 to source voltage VG2S –6 V
• Drain current ID 80 mA
• Allowable power dissipation PD 150 mW
• Channel temperature Tch 150 °C
• Storage temperature Tstg –55 to +150 °C
– 1 –
3SK165A
E96Y12-PS
GaAs N-channel Dual Gate MES FET
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operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.