2N5298
Features
With TO-220 package
Designed for use in general purpose amplifier and switching
applications
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 80 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5.0 V
ICP Peak collector current 5.0 A
IC Collector current 4.0 A
PC Collector power dissipation 36 W
Tj Junction temperature -65~150
Tstg Storage temperature -65~150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBO Collector-base cut-off current VCB = 80V; IE=0 0.2 mA
IEBO Emitter-base cut-off current VEB = 5V; IC=0 1.0 mA
ICEO Collector-emitter cut-off current VCE=60V,IB=0 0.3 mA
VCBO Collector-base breakdown voltage
V(BR)CEO Collector-emitter breakdown voltage IC=30mA,IB=0 60 V
VEBO Emitter-base breakdown voltage
VCEsat-1 Collector-emitter saturation voltages IC = 3A; IB = 375mA 1.2 V
VCEsat-2 Collector-emitter saturation voltages
VCEsat-3 Collector-emitter saturation voltages
VCEsat-4 Collector-emitter saturation voltages
hFE-1 Forward current transfer ratio IC=1A,VCE=4V 25
hFE-2 Forward current transfer ratio IC=3A,VCE=4V 10 50
hFE-3 Forward current transfer ratio
hFE-4 Forward current transfer ratio
VBE(sat)1 Base-emitter saturation voltages IC=3A,VCE=4V 1.8 V
VBE(sat)2 Base-emitter saturation voltages
VBE(sat)3 Base-emitter saturation voltages
fT Transition frequency at f = 1MHz IC=0.5A,VCE=10V 3.0
tf Fall time
ts Tum-off storage time
Electrical Characteristics Tc=25
Silicon NPN Transistors
TO-220
nullINCHANGEPower Transistors