A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 35 mA 55 V
BV
CER
I
C
= 35 mA R
BE
= 75 Ω 40 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CER
V
CE
= 30 V R
BE
= 75 Ω 10 mA
h
FE
V
CE
= 10 V I
C
= 2.0 A 15 100 ---
C
OB
V
CB
= 28 V f = 1.0 MHz 45 pF
P
G

IMD
V
CC
= 25 V I
C
= 4.5 A f = 860 MHz
P
OUT
= 20 W
95

10.5
-52

-51
dB
dBc
P
OUT
V
CE
= 25 V I
C
= 4.5 A f = 860 MHz 35 40 W

NPN SILICON RF POWER TRANSISTOR
TPV6030
DESCRIPTION:
The ASI TPV6030 is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• P
G
= 9.5 dB at 35 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
15 A
V
CEO
28 V
V
CBO
55 V
V
EBO
4.0 V
P
DISS
160 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.1 °C/W
PACKAGE STYLE .400 BAL FLG(C)



















MINIMUM
inches / mm
.380 / 9.65
.120 / 3.05
.780 / 19.81
B
C
D
E
F
G
A
MAXIMUM
.130 / 3.30
.820 / 20.83
.390 / 9.91
inches / mm

1.090 / 27.69
H
DIM
K
L
I
J
.003 / 0.08
.060 / 1.52
.007 / 0.18
.070 / 1.78
.205 / 5.21
N
M
.850 / 21.59 .870 / 22.10
.220 / 5.59 .230 / 5.84
.435 / 11.05
.082 / 2.08 .100 / 2.54
.407 / 10.34.395 / 10.03

.080x45°
A
B
F
G
H
I
J
K
L
M
(4X).060 R
.1925
D
C
E
FULL R
N
1.335 / 33.91 1.345 / 34.16
.210 / 5.33