A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 30 V
BVCER IC = 100 mA RBE = 10 Ω 60 V
BVCBO IC = 100 mA 60 V
BVEBO IE = 20 mA 4.0 V
hFE VCE = 5.0 V IC = 1.0 A 10 120 ---
Cob VCB = 30 V f = 1.0 MHz 150 pF
Pout VCE = 28 V IC = 3.5 A f = 225 MHz 20 W
y VCE = 28 V IE = 3.5 A PREF =20 W
LOAD VSWR = ∞:1 f = 225 MHz NO DEGRADATION IN OUTPUT POWER
IMD1
Pref = 30 W VISION CARRIER = -8.0 dB
SOUND CARRIER = -7.0 dB SIDEBAND SIG. = -16 dB
VCE = 28 V IE = 3.5 A f = 225 MHz
-53 dB
NPN SILICON RF POWER TRANSISTOR
TPV376
DESCRIPTION:
The ASI TPV376 is a Common
Emitter Device Designed for High
Linearity Class A Television Band III
(170-230 MHz) Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
IC 16 A
VCB 60 V
PDISS 150 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
qJC 1.2 OC/W
PACKAGE STYLE .550 4L STUD(1/4)