2SJ610
2002-09-11 1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ610

Switching Regulator, DC-DC Converter and
Motor Drive Applications




Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 1.85 Ω (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 18 S (typ.)
Gb7G20 Low leakage current: I
DSS
= −100 µA (V
DS
= −250 V)
Gb7G20 Enhancement-mode: V
th
= −1.5~−3.5 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Tc G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
G2d250 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
G2d250 V
Gate-source voltage V
GSS
Gb120 V
DC (Note 1) I
D
G2d2.0
Drain current
Pulse (t G3dG201 ms)
(Note 1)
I
DP
G2d4.0
A
Drain power dissipation P
D
20 W
Single pulse avalanche energy
(Note 2)
E
AS
180 mJ
Avalanche current
I
AR
G2d2.0 A
Repetitive avalanche energy (Note 3) E
AR
2.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
6.25 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
125 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
G3d G2d50 V, T
ch
G3d 25°C (initial), L G3d 75 mH, I
AR
G3d G2d2.0 A,
R
G
G3d 25 G57
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.



Unit: mm


JEDEC ―
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)


JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)