2SC5819
2001-12-17 1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5819

High-Speed Switching Applications
DC-DC Converter Applications


Gb7G20 High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.15 A)
Gb7G20 Low collector-emitter saturation voltage: V
CE (sat)
= 0.12 V (max)
Gb7G20 High-speed switching: t
f
= 45 ns (typ.)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
40 V
Collector-emitter voltage V
CEX
30 V
Collector-emitter voltage V
CEO
20 V
Emitter-base voltage V
EBO
7 V
DC I
C
1.5
Collector current
Pulse I
CP
2.5
A
Base current I
B
150 mA
t G3d 10 s 2.0
Collector power
dissipation
DC
P
C

(Note 1) 1.0
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
G2d55 to 150 °C
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)

Electrical Characteristics (Ta G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d 40 V, I
E
G3d 0 Gbe Gbe 100 nA
Emitter cut-off current I
EBO
V
EB
G3d 7 V, I
C
G3d 0 Gbe Gbe 100 nA
Collector-emitter breakdown voltage V
(BR) CEO
I
C
G3d 10 mA, I
B
G3d 0 20 Gbe Gbe V
h
FE
(1)

V
CE
G3d 2 V, I
C
G3d 0.15 A 400 Gbe 1000
DC current gain
h
FE
(2)

V
CE
G3d 2 V, I
C
G3d 0.5 A 200 Gbe Gbe

Collector-emitter saturation voltage V
CE (sat)
I
C
G3d 0.5 A, I
B
G3d 10 mA Gbe Gbe 0.12 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d 0.5 A, I
B
G3d 10 mA Gbe Gbe 1.10 V
Collector output capacitance C
ob
V
CB
G3d 10 V, I
E
G3d 0, f G3d 1 MHz GbeG20 18 GbeG20 pF
Rise time t
r
Gbe 43 Gbe
Storage time t
stg
Gbe 295 Gbe Switching time
Fall time t
f

See Figure 1 circuit diagram.
V
CC
G7e
G2d
12 V, R
L
G3d 24 G57
I
B1
G3d G2dI
B2
G3d 17 mA
Gbe 45 Gbe
ns

Industrial Applications
Unit: mm


JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)