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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
900V/100mA High-Voltage Amplifier
High-Voltage Switching Applications
Ordering number:EN1800E
2SC3675
N2098HA (KT)/80796TS (KOTO) 8-9202/4237AT/3195KI, TS No.1800–1/3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2010C
[2SC3675]
Applications
· High voltage amplifiers.
· High-voltage switching applications.
· Dynamic focus applications.
Features
· High breakdown voltage (V
CEO
min=900V).
· Small Cob (Cob typ=2.8pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
Tc=25˚C
JEDEC : TO-220AB
EIAJ : SC46
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0051V
egatloVrettimE-ot-rotcello
OEC
009V
egatloVesaB-ot-rettimEV
OBE
5V
tnerruCrotcelloCI
C
001Am
)esluP(tnerruCrotcello
PC
003Am
noitapissiDrotcelloCP
C
01W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V009=
E
0=01Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V4=
C
0 1Aµ
niaGtnerruCCD h
EF
V
EC
I,V5=
C
Am01= 03
tcudorPhtdiwdnaB-niaGf
T
V
EC
I,V01=
C
Am01= 6zHM
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC
I
C
I,Am02=
B
Am4= 5V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB
I
C
I,Am02=
B
Am4= 2V
egatloVnwodkaerBesaB-ot-rotcello
OBC)RB(
I
C
I,Am1=
E
0=0051V
egatloVnwodkaerBrettimE-ot-rotcello
OEC)RB(
I
C
R,Am1=
EB
=¥ 009V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB(
I
E
I,Am1=
C
0=5V
ecnaticapaCtuptuOboCV
BC
zHM1=f,V001= 8.2Fp