1
Publication date: September 2003 SJC00292AED
Transistors
2SB1693
Silicon PNP epitaxial planar type
For general amplification
■ Features
• Large collector current I
C
• Mini type package, allowing downsizing of the equipment and auto-
matic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−40 V
Collector-emitter voltage (Base open) V
CEO
−20 V
Emitter-base voltage (Collector open) V
EBO
−15 V
Collector current I
C
− 0.5 A
Peak collector current I
CP
−1A
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −40 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −20 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −15 V
Forward current transfer ratio
*
h
FE1
V
CE
= −2 V, I
C
= −100 mA 160 560 
h
FE2
V
CE
= −2 V, I
C
= −500 mA 100
Collector-emitter saturation voltage
*
V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA −60 −300 mV
I
C
= − 0.5 A, I
B
= −25 mA −210 −500
Transition frequency f
T
V
CB
= −5 V, I
E
= 50 mA, f = 200 MHz 170 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 16 pF
(Common base, input open circuited)
Marking Symbol: 3D
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Pulse measurement
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package