2SB1176
器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：94.93KB，共4页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: March 2003 SJD00052AED
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −10 mA, I
B
= 0 −80 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −100 V, I
E
= 0 −10 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −50 µA
Forward current transfer ratio h
FE1
V
CE
= −2 V, I
C
= − 0.1 A 45
h
FE2
*
V
CE
= −2 V, I
C
= −2 A 90 260
Collector-emitter saturation voltage V
CE(sat)
I
C
= −4 A, I
B
= − 0.2 A − 0.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −4 A, I
B
= − 0.2 A −1.5 V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 10 MHz 30 MHz
Turn-on time t
on I
C
= −2 A, I
B1
= − 0.2 A, I
B2
= 0.2 A
0.13 µs
Storage time t
stg
V
CC
= −50 V 0.5 µs
Fall time t
f
0.13 µs
2SB1176
Silicon PNP epitaxial planar type
For voltage switching
Complementary to 2SD1746
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Satisfactory linearity of forward current transfer ratio h
FE
• Large collector current I
C
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−130 V
Collector-emitter voltage (Base open) V
CEO
−80 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−5A
Peak collector current I
CP
−10 A
Collector power dissipation P
C
15 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Rank Q P
h
FE2
90 to 180 130 to 260
7.0±0.3
3.5±0.2
0˚ to 0.15˚
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0˚ to 0.15˚
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
1
Publication date: March 2003 SJD00052AED
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −10 mA, I
B
= 0 −80 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −100 V, I
E
= 0 −10 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −50 µA
Forward current transfer ratio h
FE1
V
CE
= −2 V, I
C
= − 0.1 A 45
h
FE2
*
V
CE
= −2 V, I
C
= −2 A 90 260
Collector-emitter saturation voltage V
CE(sat)
I
C
= −4 A, I
B
= − 0.2 A − 0.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −4 A, I
B
= − 0.2 A −1.5 V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 10 MHz 30 MHz
Turn-on time t
on I
C
= −2 A, I
B1
= − 0.2 A, I
B2
= 0.2 A
0.13 µs
Storage time t
stg
V
CC
= −50 V 0.5 µs
Fall time t
f
0.13 µs
2SB1176
Silicon PNP epitaxial planar type
For voltage switching
Complementary to 2SD1746
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Satisfactory linearity of forward current transfer ratio h
FE
• Large collector current I
C
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−130 V
Collector-emitter voltage (Base open) V
CEO
−80 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−5A
Peak collector current I
CP
−10 A
Collector power dissipation P
C
15 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Rank Q P
h
FE2
90 to 180 130 to 260
7.0±0.3
3.5±0.2
0˚ to 0.15˚
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0˚ to 0.15˚
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.