Power Transistors
1
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
a73 Features
• Output of 3 W can be obtained by a complementary pair with
2SC1846
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
a73 Absolute Maximum Ratings T
C
= 25°C
1: Emitter
2: Collector
3: Base
TO-126B Package
Unit: mm
a73 Electrical Characteristics T
C
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−45 V
Collector to emitter voltage V
CEO
−35 V
Emitter to base voltage V
EBO
−5V
Peak collector current I
CP
−1.5 A
Collector current I
C
−1A
Collector power dissipation P
C
1.2
*
1
W
5
*
2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
I
CEO
V
CE
= −20 V, I
B
= 0 −100 µA
Emitter cutoff current I
EBO
V
EB
= −5V, I
C
= 0 −10 µA
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −45 V
Collector to emitter voltage V
CEO
I
C
= −2 mA, I
B
= 0 −35 V
Forward current transfer ratio h
FE1

*
V
CE
= −10 V, I
C
= −500 mA 85 340
h
FE2
V
CE
= −5 V, I
C
= −1 A 50
Collector to emitter saturation voltage V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 20 30 pF
Note)
*
: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Note)
*
1: Without heat sink
*
2: With a 100 × 100 × 2 mm A1 heat sink
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.13.8
±0.3
11.0
±0.5
16.0
±1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Note.) The Part number in the Parenthesis shows conventional part number.