2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) Single and Quad MOSFETs
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
(BR)DSS
Min (V) r
DS(on)
Max (C0087) V
GS(th)
(V) I
D
(A)
2N6660 3 @ V
GS
= 10 V 0.8 to 2 1.1
VQ1004J/P
60
3.5 @ V
GS
= 10 V 0.8 to 2.5 0.46
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 Low On-Resistance: 1.3 C0087
C0068 Low Threshold: 1.7 V
C0068 Low Input Capacitance: 35 pF
C0068 Fast Switching Speed: 8 ns
C0068 Low Input and Output Leakage
C0068 Low Offset Voltage
C0068 Low-Voltage Operation
C0068 Easily Driven Without Buffer
C0068 High-Speed Circuits
C0068 Low Error Voltage
C0068 Direct Logic-Level Interface: TTL/CMOS
C0068 Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
C0068 Battery Operated Systems
C0068 Solid-State Relays
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
Plastic: VQ1004J
Sidebraze: VQ1004P
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
2N6660
Device Marking
Top View
VQ1004J
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
VQ1004P
“S” fllxxyy
Device Marking
Side View
2N6660
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083C0032C0040C0084
C0065
C0032C0061C0032C0050C0053C0095C0067C0032C0085C0078C0076C0069C0083C0083C0032C0079C0084C0072C0069C0082C0087C0073C0083C0069C0032C0078C0079C0084C0069C0068C0041
Single Total Quad
Parameter Symbol 2N6660
VQ1004J VQ1004P VQ1004J/P
Unit
Drain-Source Voltage V
DS
60 60 60
Gate-Source Voltage V
GS
C003420 C003430 C003420
V
Continuous Drain Current
T
C
= 25C0095C 1.1 0.46 C00340.46
(T
J
= 150C0095C) T
C
= 100C0095C
I
D
0.8 0.26 0.26
A
Pulsed Drain Current
a
I
DM
3 2 2
T
C
= 25C0095C 6.25 1.3 1.3 2
Power Dissipation
T
C
= 100C0095C
P
D
2.5 0.52 0.52 0.8
W
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170 0.96 0.96 62.5
C0095
Thermal Resistance, Junction-to-Case R
thJC
20
C/W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150 C0095C
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.