TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
Devices Qualified Level
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S




JAN
JANTX
JANTXV

MAXIMUM RATINGS

Ratings

Symbol
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S

Unit
Collector - Emitter Voltage V CEO 70 120 170 Vdc
Collector - Base Voltage V CBO 100 150 200 Vdc
Emitter - Base Voltage V EBO 10 Vdc
Collector Current I C 10 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +100 0 C (2) P T
1.0
5.0 W
Operating & Storage Junction Temp. Range T J , T st g - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case
Junction - to - Ambient
R θJC
R θJA
0.020
0.175
0 C/mW
1) Derate linearly @ 5.7 mW/ 0 C for T A > +25 0 C
2) Derate linearly @ 50 mW/ 0 C for T C > +25 0 C


TO - 5*
2N4150, 2N5237,
2N5238


TO - 39*
(TO - 205AD)
2N4150S, 2N5237S,
2N5238S
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter - Base Breakdown Voltage
I E = 10 µAdc

V (BR) EBO

7.0

Vdc
Collector - Emitter Breakdown Voltage
I C = 0.1 Adc 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S

V (BR) CEO

70
120
170


Vdc
Collector - Emitter Cu toff Current
V EB = 0.5 Vdc, V CE = 60 Vdc 2N4150, 2N4150S
V EB = 0.5 Vdc, V CE = 110 Vdc 2N5237, 2N5237S
V EB = 0.5 Vdc, V CE = 160 Vdc 2N5238, 2N5238S

I CEX

10
10
10

µAdc


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