TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/369
Devices Qualified Level
2N3441




JANTX

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector - Emitter Voltage V CEO 140 Vdc
Collector - Base Voltage V CBO 160 Vdc
Col lector - Emitter Voltage V CER 150 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Base Current I B 2.0 Adc
Collector Current I C 3.0 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
3.0
25
W
W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case
Junction - to - Ambient
R θJC
R θJA
7.0
58.5
0 C/W
0 C/W
1) Derate linearly @ 17.1 mW/ 0 C for T A > +25 0 C
2) Derate linearly @ 143 mW/ 0 C for T C > +25 0 C










TO - 66* (TO - 213AA)

*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Voltage
I C = 100 mAdc V (BR) CEO 140 Vdc
Collector - Emitter Breakdown Voltage
I C = 100 mAdc, R BE = 100 Ω V (BR) CER 150 Vdc
Collector - Emitter Breakdown Voltage
I C = 100 mAdc, V BE = - 1.5 Vdc V (BR) CEX 160 Vdc
Collector - Base Cutoff Current
V CB = 140 Vdc, V BE = - 1.5 Vdc I CEX 1.0 mAdc
Emitter - Base Cutoff Current
V EB = 7.0 Vdc I EBO 1.0 mAdc
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