1SV329
2003-03-24 1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV329

VCO for UHF Band Radio


Gb7G20 High capacitance ratio: C
1 V
/C
4 V
= 2.8 (typ.)
Gb7G20 Low series resistance: r
s
= 0.55 Ω (typ.)
Gb7G20 Useful for small size tuner.

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Reverse voltage V
R
10 V
Junction temperature T
j
125 °C
Storage temperature range T
stg
G2d55~125 °C










Electrical Characteristics (Ta G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage V
R
I
R
G3d 1 G6dA 10 Gbe Gbe V
Reverse current I
R
V
R
G3d 10 V Gbe Gbe 3 nA
Capacitance C
1 V
V
R
G3d 1 V, f G3d 1 MHz 5.7 Gbe 6.7 pF
Capacitance
4 V
V
R
G3d 4 V, f G3d 1 MHz 1.85 Gbe 2.45 pF
Capacitance ratio C
1 V
/C
4 V
Gbe 2.7 2.8 Gbe Gbe
Series resistance r
s
V
R
G3d 1 V, f G3d 470 MHz Gbe 0.55 0.7 G57
Note: Signal level when capacitance is measured: Vsig G3d 100 mVrms

Marking



Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 1-1G1A
Weight: 0.0014 g (typ.)