EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

11E1

器件描述:DIODE
器件厂商:ETC [ETC]
厂商主页:
文件大小:21.45KB,共2页
Sponsor by e络盟
器件资料摘要:
Bç
ç
ç
OUTLINE DRAWING
ç
ççççççççççççççççççççççççççççççççççççççççççççççççç
ç
ç
ç
ç


Maximum Ratings Approx Net Weight:0.21g
Rating Symbol 11E1 Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Non-repetitive Peak Reverse Voltage VRSM 250 V
Average Rectified Output Current IO 1.0 Ta=40°C
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current IF(RMS) 1.57
Surge Forward Current IFSM 45
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
Operating JunctionTemperature Range Tjw - 40 to + 150 °C
Storage Temperature Range Tstg - 40 to + 150 °C

Electrical • Thermal Characteristics
Characteristics Symbol Conditions Min. Typ. Max. Unit
Peak Reverse Current IRM Tj= 25°C, VRM= VRRM - - 50 µA
Peak Forward Voltage VFM Tj= 25°C, IFM= 1.0A - - 1.0 V
Thermal Resistance Rth(j-a) Junction to Ambient - - 120 °C/W
















DIODE Type : : 11E1
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available