Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4540AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 25 A
I
CM
Collector current peak value - 40 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
V
CEsat
Collector-emitter saturation voltage I
C
= 16.0 A; I
B
= 4 A - 3.0 V
I
Csat
Collector saturation current f = 32kHz 16 - A
f = 110kHz 8 - A
t
f
Storage time I
Csat
= 16 A; f = 32kHz t.b.f t.b.f µs
I
Csat
= 8 A; f = 110kHz t.b.f t.b.f µs
PINNING - SOT430 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
heat collector
sink
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 25 A
I
CM
Collector current peak value - 40 A
I
B
Base current (DC) - 10 A
I
BM
Base current peak value - 15 A
-I
B(AV)
Reverse base current average over any 20 ms period - 200 mA
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
T
stg
Storage temperature -55 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - - 1.0 K/W
R
th j-a
Junction to ambient in free air 35 - K/W
123
b
c
e
January 1998 1 Rev 1.000