3359B–FLASH–10/04
4-megabit
(512K x 8)
5-volt Only
Flash Memory
AT49F040A
PLCC Top View
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2
GND
I/O3 I/O4 I/O5 I/O6
A12 A15 A16 A18 VCC WE A17
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
Features
Single-voltage Operation
–5V Read
– 5V Reprogramming
Fast Read Access Time – 55 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Pr
– Two 8K Bytes Parameter Blocks
– Eight Main Memory Blocks (One 32K
Fast Erase Cycle Time – 6 Seconds
Byte-by-Byte Programming – 20 µs/Byte
Hardware Data Protection
DATA Polling for End of Program Det
Low Power Dissipation
– 20 mA Active Current
– 70 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F040A is a 5-volt only in
4 megabits of memory is organized as
Atmel’s advanced nonvolatile CMOS
55 ns with power dissipation of just 110
Pin Configurations
Pin Name Function
ogramming Lockout
Bytes, Seven 64K Bytes)
Typical
ection
-system reprogrammable Flash memory. Its
524,288 words by 8 bits. Manufactured with
technology, the device offers access times to
mW over the commercial temperature range.
TSOP Top View (8 x 20 mm)
1