B-10 01/99
2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 150 °C) 2 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
2N4220 2N4221 2N4222
2N4220A 2N4221A 2N4222A
At 25°C free air temperature:
NJ16 NJ16 NJ32 Process
Static Electrical Characteristics
Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 30 – 30 – 30 V I
G
= – 1µA, V
DS
= ØV
Gate Reverse Current I
GSS
– 0.1 – 0.1 – 0.1 nA V
GS
= – 15V, V
DS
= ØV
– 0.1 – 0.1 – 0.1 µA V
GS
= – 15V, V
DS
= ØV T
A
= 150°C
Gate Source Voltage
V
GS
– 0.5 – 2.5 – 1 – 5 – 2 – 6 V
V
DS
= 15V, I
D
= ( )
(50) (50) (200) (200) (500) (500) µA
Gate Source Cutoff Voltage V
GS(OFF)
– 4– 6– 8VV
DS
= 15V, I
D
= 0.1 nA
Drain Saturation Current (Pulsed) I
DSS
0.5326515mAV
DS
= 15V, V
GS
= ØV
Dynamic Electrical Characteristics
Common Source Forward
g
fs
1000 4000 2000 5000 2500 6000 µS V
DS
= 15V, V
GS
= ØV f = 1 kHz
Transconductance
Common Source Forward Transmittance | Y
fs
| 750 750 750 µS V
DS
= 15V, V
GS
= Ø V f = 100 MHz
Common Source Output Conductance g
os
10 20 40 µS V
DS
= 15V, V
GS
= ØV f = 1 kHz
Common Source Input Capacitance C
iss
666pF
DS
= 15V, V
GS
= ØV f = 1 MHz
Common Source Reverse
C
rss
222pFV
DS
= 15V, V
GS
= ØV f = 1 MHz
Transfer Capacitance
Noise Figure
NF 2.5 2.5 2.5 dB
V
DS
= 15V, V
GS
= ØV
f = 100 MHz
2N4220A, 2N4221A, 2N4222A R
G
= 1 MΩ
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Databook.fxp 1/13/99 2:09 PM Page B-10