Jan-24-2003
1
BFR380F
1
23
NPN Silicon RF Transistor
Preliminary data
G01 High current capability and low figure for
wide dynamic range application
G01 Low voltage operation
G01 Ideal for low phase noise oscillators up to 3.5 GHz
G01 Low noise figure: 1.1 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR380F FCs
1 = B 2 = E 3 = C
TSFP-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
6 V
Collector-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
2
Collector current I
C
80 mA
Base current I
B
14
Total power dissipation
1)

T
S
G01 95°C
P
tot
380 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
R
thJS
G01 145
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance