FEATURES
C0068 TrenchFETC0114 Power MOSFETS
APPLICATIONS
C0068 Load Switch
C0068 Battery Switch
Si6911DQ
Vishay Siliconix
New Product
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
1
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(C0087) I
D
(A)
0.026 @ V
GS
= -4.5 V -5.1
-12 0.035 @ VGS = -2.5 V -4.5
0.046 @ V
GS
= -1.8 V -3.9
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
C0068
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information: Si6911DQ T-1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C0095C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
DS
-12
V
Gate-Source Voltage V
GS
C00348
Continuous Drain Current (T
J
= 150C0095C)
a
T
A
= 25C0095C
I
D
-5.1 -4.3
T
A
= 70C0095C -4.1 -3.5
A
Pulsed Drain Current (10 C0109s Pulse Width) I
DM
-30
Continuous Source Current (Diode Conduction)
a
I
S
-1.0 -0.7
Maximum Power Dissipation
a
T
A
= 25C0095C
P
D
1.14 0.83
W
T
A
= 70C0095C 0.73 0.53
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150 C0095C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Mi J ti tAbit
a
t C0118 10 sec
R
86 110
Maximum Junction-to-Ambient
Steady State
thJA
124 150
C0095C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
59 75
Notes
a. Surface Mounted on 1” x 1” FR4 Board.