6AM15
器件描述：Silicon N/P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：236.53KB，共14页
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6AM15
Silicon N/P Channel MOS FET
High Speed Power Switching
ADE-208-719 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
N Channel : RDS(on) = 0.045 Ω typ.
P Channel : RDS(on) = 0.085 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
• High density mounting
Outline
Silicon N/P Channel MOS FET
High Speed Power Switching
ADE-208-719 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
N Channel : RDS(on) = 0.045 Ω typ.
P Channel : RDS(on) = 0.085 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
• High density mounting
Outline