2SK3439
2001-12-11 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3439

DC-DC Converter
Relay Drive and Motor Drive Applications


• Low drain-source ON resistance: R
DS (ON)
= 3.8 mΩ (typ.)
• High forward transfer admittance: |Y
fs
| = 70 S (typ.)
• Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 30 V)
• Enhancement-mode: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta = 25°C) ç
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
30 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
30 V
Gate-source voltage V
GSS
±20 V
DC (Note 1) I
D
75
Drain current Pulse (t
<
=
1 ms)
(Note 1)
I
DP
300
A
Drain power dissipation (Tc = 25°C) P
D
125 W
Single pulse avalanche energy
(Note 2)
E
AS
731 mJ
Avalanche current I
AR
75 A
Repetitive avalanche energy (Note 3) E
AR
12.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.00 °C/W
Note 1: Please use devices on conditions that the channel temperature
is below 150°C.
Note 2: V
DD
= 24 V, T
ch
= 25°C (initial), L = 100 µH, R
G
= 25 Ω,
I
AR
= 75 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device. Please handle with
caution.

Marking



Unit: mmç



JEDEC ―
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)

Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
1
2
3
4


Þ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
Þ
Type K3439