TO-92 Plastic-Encapsulated Transistors



2N4401 TRANSISTOR (NPN)

FEATURES
Power dissipation
P
CM
: 0.625 W (Tamb=25℃)
Collector current
I
CM :
0.6 A
Collector-base voltage
V
(BR)CBO
: 60 V

Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃


ELECTRICAL CHARACTERISTICS ( Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100µA , I
E
=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V
Collector cut-off current ICBO VCB=50 V , IE=0 0.1 µA
Collector cut-off current ICEO VCE=35 V , IB=0 0.1 µA
Emitter cut-off current IEBO VEB=5V , IC=0 0.1 µA
DC current gain hFE 1 V
CE
=1 V, I
C
= 150mA 100 300
Collector-emitter saturation voltage VCE(sat) IC=150 mA, IB=15mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC= 150 mA, IB=15mA 0.95 V
Transition frequency f
T

V
CE
= 10V, I
C
= 20mA

f = 100MHz
250 MHz





1 2 3

TO-92




1.EMILTTER

2.BASE

3. COLLECTOR
Transys
Electronics
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