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2N3821

器件描述:TECHNICAL DATA
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:54.08KB,共2页
Sponsor by e络盟
器件资料摘要:
TECHNICAL DATA

N-CHANNEL J-FET DEPLETION MODE
Qualified per MIL-PRF-19500/375
Devices Qualified Level
2N3821 2N3822 2N3823




JANTX
JANTXV

MAXIMUM RATINGS

Parameters / Test Conditions

Symbol
2N3821
2N3822

2N3823

Unit
Gate - Source Voltage V GSR 50 30 V
Drain - Source Voltage V DS 50 30 V
Drain - Gate Voltage V DG 50 30 V
Gate Current I GF 10 mA
Power Dissipation T A = +25 0 C (1) P T 300 mW
Operating Junction & Storage Temperature Range T j , T stg - 55 to +200 0 C
(1) Derate linearly 1.7 mW/ 0 C for T A +25 0 C.



TO - 72*
(TO - 206AF)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Units
Gate - Source Breakdown Voltage
V DS = 0, I G = 1.0 µAdc 2N3821, 2N3822
2N3823

V (BR)GSSR

50
30

Vdc
Gate Reverse Current
V DS = 0, V GS = 30 Vdc 2N3821, 2N3822
V DS = 0, V GS = 20 Vdc 2N3823

I GSSR

0.1
0.5

ηA
Zero - Gate - Voltage Drain Current
V GS = 0, V DS = 15 Vdc 2N3821
2N3822
2N3823

I DSS

0.5
2.0
4 .0

2.5
10
20


mA
Gate - Source Voltage
V DS = 15 Vdc, I D = 50 µAdc 2N3821
V DS = 15 Vdc, I D = 200 µAdc 2N3822
V DS = 15 Vdc, I D = 400 µAdc 2N3823


V GS

0.5
1.0
1.0

2.0
4.0
7.5


Vdc
Gate - Source Cutoff Voltage
V DS = 15 Vdc, I D = 0.5 ηAdc 2N3 821
2N3822
2N3823


V GS(off)

4.0
6.0
8.0


Vdc

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